An atomic and electronic structure of the bulk and thin-film morphologies ofZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 minexposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of notmore than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples werequalified by X-ray photoelectron core-level and valence band mappingspectroscopy applying ASTM materials science standard. The spectroscopy dataobtained was discussed on the basis of DFT-models for Bi-embedding into ZnOhost-matrices. It was established that in the case of direct Bi-impuritiesinsertion into the employed ZnO-host for both studied morphologies neither theonly "pure" Bi2O3-like phase nor the only "pure" Bi-metal will be preferable toappear as a secondary phase. An unfavorability of the large clusteragglomeration of Bi-impurities in ZnO-hosts has been shown and an oxygen 2selectronic states pleomorphizm was surely established.
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机译：ZnO的本体和薄膜形态的原子和电子结构通过脉冲Bi-离子注入（1x1017 cm-2能量密度，Bi-离子束下70倍的放气量，EBi + = 30 keV，脉冲离子电流密度不超过0.8 mA / cm2，重复频率为12.5 Hz）。最终样品采用ASTM材料科学标准通过X射线光电子核能级和价带谱图谱进行鉴定。基于双FT嵌入ZnOhost矩阵的DFT模型讨论了获得的光谱数据。已经确定，对于两种研究的形态，在直接将Bi-杂质引入所用的ZnO-主体中的情况下，仅“纯” Bi 2 O 3-类相和仅“纯” Bi-金属都不会作为第二相出现。已经显示了在ZnO主体中Bi杂质的大簇团聚的不利条件，并且确定地建立了氧2s电子态的多态性。
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